MOS technology
英
美 [mɔs tekˈnɑːlədʒi]
网络 MOS科技公司; 莫斯技术
双语例句
- C-HMOS technology borrows many of the design and performance characteristics of high-performance MOS ( HMOS).
HMOS技术援引了搞性能MOS（HMOS）中的许多设计和性能特征。 - The characteristic of multi-input is convenient to the design of the filter. The structure is simple and compatible to MOS technology.
其多输入特性更便于滤波器结构的设计，故所设计的滤波器结构简单、对称性好，且与MOS工艺兼容。 - Based on MEMS technology, after heat oxidation, diffusion, doping, sputtering, light etching, cleaning out and other techniques performed on a silicon plane step by step, an ammonia-sensitive sensor has been made.
利用MEMS技术，在硅平面上经过热氧化、掺杂、溅射、光刻、清洗等工艺，制成MOS结构的氨敏传感器，并将双加热器和测温器集成于一体。 - The filter needs only OTAs and grounded capacitors and is convenient for being realized by MOS technology.
这种滤波器只需要OTA器件和接地电容，适合于MOS技术集成。 - SPIC ( Smart Power Integrated Circuit) based on new power MOS device develop rapidly along with the advancement of Micro-electronics technology.
随着微电子技术的进步，以新型功率MOS器件为基础的智能功率集成电路（SPIC）得到了迅速发展。 - In CMOS technology, the MOSFET located in a well can become a bulk device and ope-rate in the lateral bipolar mode when suitable bias is applied.
在CMOS工艺结构中，将位于阱中的MOS器件加适当的偏置，可以使其变为体内器件、以横向双极管的模式工作。 - OTA-C active filters may become the most potential because they have good high frequency characteristic and electrically controlled ability, greatly strengthened circuit synthesis ability and compatibility with MOS VLSI technology.
它具有良好的高频特性和电控能力、极强的电路综合能力、与MOSVLSI工艺兼容等优点成为众多的滤波器中最具发展潜力的一种滤波器。 - CEXTOR: A Circuit Extractor for MOS IC Technology Circuit Classical
CEXTOR&一个适合MOS集成电路工艺的电路提取程序 - On the base of analysis design principle, we proposed a low dropout regulator using BiCMOS technology which benefits from the speed of bipolar devices and the low power consumption of MOS devices.
本文在分析LDO设计原理的基础知识上，提出了一种采用BiCMOS结构的低压差线性稳压器，它充分利用了双极型器件速度快和MOS器件功耗低的特性。 - A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide
As离子注入硅化钛自对准MOS器件技术研究 - Five-Transistor Memory Cells in ESFI MOS Technology
绝缘体上外延硅薄膜MOS工艺的五管存储单元 - The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。 - Study on HVMOS Device Technology Compatible with Conventional CMOS Process
与常规CMOS工艺相兼容的高压MOS器件工艺研究 - Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors ( ISFET) based on MOS technology.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。 - Highly Effective Half-Wave Rectifying Circuits Based on MOS Technology
一种高效MOS半波整流电路 - Full Ion Implanted MOS Technology Using Infrared Transient Annealing
红外瞬态退火全离子注入MOS工艺的研究 - This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation.
分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。 - Microelectronic technology's kernel is IC. MOS memories, which are typical IC products, also develop very rapidly.
微电子技术的核心是集成电路，MOS存储器作为集成电路的典型代表产品，发展异常迅猛。 - It can be expected that the acts of fluorine on the interface of Si/ SiO2 and in the SiO2 film are responsible to the radiation effects of MOS structures and depend on the technology of F implantation.
可以预测，F在Si/SiO2界面附近和SiO2中的行为直接与MOS结构的辐射响应相对应，而F的行为依赖于注F工艺条件。 - With the analysing and experimenting of PIN structure and MOS circuit compatible technology. the testing results show that PIN structure is beneficial to improving SSPA performances and is a new sturcture for studying high performance SSPA.
经过PIN结构和MOS电路兼容工艺方案的分析及实验，测试结果表明PIN结构有利于改进SSPA的性能，是研究高性能SSPA的新结构。 - Humid resistant properties and abrasion durability of MoS 2 based composite coatings deposited with unbalanced nano compound plasma plating technology were analyzed by tribological tests and XPS.
利用摩擦学试验及XPS测试考察了非平衡纳米复合等离子体镀膜技术沉积的MoS2基纳米复合薄膜的抗潮湿性和耐磨寿命等。 - A Study on the Engineering Techniques for MOS Technology
MOS工艺工程技术研究 - By using the methods of MOS and Kalman filter, two forecasting models for Hefei ′ s air pollution are established. The models provide the necessary supporting technology to make the forecast of air pollution at Hefei City.
通过对空气污染预报方法的研究，采用MOS预报方法、卡尔曼滤波方法分别建立适合于合肥市空气污染特点的预报模式，为开展空气污染预报提供了必要的技术基础。 - The improved half wave rectifier is presented by employing MOS technology based on the deficiency of conventional architecture.
针对传统半波整流电路的不足提出了基于MOS工艺的改进方法及电路。 - Use of high-voltage isolated power supply and isolation drive technology, we designed a series MOS transistor switch drive.
利用高压隔离电源和隔离驱动技术，设计了上述串联MOS管开关的驱动器。 - Strained Si technology introduces stress to the channel of MOS devices by using appropriate process or materials. The band structure of Si, the conductivity effective mass and the carriers 'scattering probability can be altered by stress, resulting in the favorable increase of carriers' mobility.
应变硅技术通过采用适当的工艺或材料在MOS器件的沟道中引入应力，改变硅的能带结构、电导有效质量以及载流子的散射概率，提高载流子的迁移率。 - Charge-coupled device ( CCD) which based on the development of MOS integrated circuit technology is a major breakthrough in semiconductor technology.
电荷耦合器件（CCD）是在MOS集成电路技术基础上发展起来的，是半导体技术的一次重大突破。 - 1N-type substrate diffusion process is the preparation of the common substrate technology, and it is widely used in transistors, MOS tube and other discrete devices in the craft.
N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。 - Power MOS is a novel power electronic switching devices, which is developed on the basis of integrated circuit technology.
功率MOS是在集成电路工艺基础上发展起来的新一代电力电子开关器件。